@inproceedings{STTRAM:Chen2008,
   author = {Chen, Yiran and Wang, Xiaobin and Li, Hai and H., Liu and Dimitrov, D. V.},
   title = {{Design Margin Exploration of Spin-Torque Transfer RAM (SPRAM)}},
   booktitle = {Proceedings of the International Symposium on Quality Electronic Design},
   pages = {684-690},
   year = {2008}
}

@article{STTRAM:LGB+05,
   Author = {Liu, C. C. and Ganusov, I. and Burtscher, M. and Sandip, Tiwari and others},
   Title = {{Bridging the processor-memory performance gap with 3D IC technology}},
   Journal = {IEEE Design \& Test of Computers},
   Volume = {22},
   Number = {6},
   Pages = {556-564},
   Note = {0740-7475},
   Year = {2005} }

@techreport{STTRAM:OM07,
   Author = {Oishi, Motoyuki},
   Title = {{Spin Injection MRAM main focus at MMM}},
   Year = {2007} }

@inproceedings{STTRAM:IEDM05,
   Author = {Hosomi, M. and Yamagishi, H. Yamamoto and  T. and others},
   Title = {{A novel nonvolatile memory with spin torque transfer magnetization switching: Spin-RAM}},
   BookTitle = {Proceedings of International Electron Devices Meeting},
   Pages = {459-462},
   Year = {2005} }

@INPROCEEDINGS{STTRAM:IEDM09,
   author={Raychowdhury, A. and Somasekhar, D. and Karnik, T. and De, V.},
   booktitle={Proceedings of International Electron Devices Meeting},
   title={{Design space and scalability exploration of 1T-1STT MTJ memory arrays in the presence of variability and disturbances}},
   year={2009},
}

@inproceedings{STTRAM:HPCA11,
   author = {Smullen, Clinton W. and Mohan, Vidyabhushan and Nigam, Anurag and Gurumurthi, Sudhanva and Stan, Mircea R.},
   title = {{Relaxing non-volatility for fast and energy-efficient STT-RAM caches}},
   booktitle = {HPCA},
   year = {2011}
}

@ARTICLE{STTRAM:IcVSt,
author={Rizzo, N. D. and DeHerrera, M. and Janesky, J. and Engel, B. and Slaughter, J. and Tehrani, S.},
journal={Applied Physics Letters},
title={{Thermally activated magnetization reversal in submicron magnetic tunnel junctions for magnetoresistive random access memory}},
year={2002},
month=apr,
volume={80},
number={13},
pages={2335-2337},
}

@ARTICLE{STTRAM:Grandis07,
author={Diao, Zhitao and Panchula, Alex and Ding, Yunfei and Pakala, Mahendra and Wang, Shengyuan and Li, Zhanjie and Apalkov, Dmytro and Nagai, Hideyasu and Driskill-Smith, Alexander and Wang, Lien-Chang and Chen, Eugene and Huai, Yiming},
journal={Applied Physics Letters},
title={{Spin transfer switching in dual MgO magnetic tunnel junctions}},
year={2007},
month=mar ,
volume={90},
number={13},
pages={132508 -132508-3},
}

@article{STTRAM:JAP07,
author={Zhitao Diao and Zhanjie Li and Shengyuang Wang and Yunfei Ding and Alex Panchula and Eugene Chen and Lien-Chang Wang and Yiming Huai},
title={{Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory}},
journal={Journal of Physics: Condensed Matter},
volume={19},
number={16},
pages={165209},
year={2007},
}

@ARTICLE{STTRAM:APL05,
author={Diao, Zhitao and Apalkov, Dmytro and Pakala, Mahendra and Ding, Yunfei and Panchula, Alex and Huai, Yiming},
journal={Applied Physics Letters},
title={{Spin transfer switching and spin polarization in magnetic tunnel junctions with MgO and AlOx barriers}},
year={2005},
month=dec ,
volume={87},
number={23},
pages={232502 -232502-3},
}

@ARTICLE{PMTJ:APL06,
author={Meng, Hao and Wang, Jian-Ping},
journal={Applied Physics Letters},
title={{Spin transfer in nanomagnetic devices with perpendicular anisotropy}},
year={2006},
month=apr ,
volume={88},
number={17},
pages={172506 -172506-3},
}

@ARTICLE{PMTJ:APL11,
author={Khalili Amiri, P. and Zeng, Z. M. and Langer, J. and Zhao, H. and Rowlands, G. and Chen, Y.-J. and Krivorotov, I. N. and Wang, J.-P. and Jiang, H. W. and Katine, J. A. and Huai, Y. and Galatsis, K. and Wang, K. L.},
journal={Applied Physics Letters},
title={{Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions}},
year={2011},
month=mar ,
volume={98},
number={11},
pages={112507 -112507-3},
}

@ARTICLE{PMTJ:Grandis10,
author={Tadisina, Z. R. and Natarajarathinam, A. and Clark, B. D. and Highsmith, A. L. and Mewes, T. and Gupta, S. and Chen, E. and Wang, S.},
journal={Journal of Applied Physics}, title={Perpendicular magnetic tunnel junctions using Co-based multilayers},
year={2010},
month=may ,
volume={107},
number={9},
pages={09C703 -09C703-3},
}

@INPROCEEDINGS{PMTJ:Toshiba08,
author={{T. Kishi, H. Yoda, et al.}},
booktitle={Proceedings of International Electron Devices Meeting},
title={{Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM}},
year={2008},
}

@ARTICLE{PMTJ:Xiaochun06,
author={Xiaochun Zhu and Jian-Gang Zhu},
journal={IEEE Transactions on Magnetics},
title={{Spin torque and field-driven perpendicular MRAM designs Scalable to multi-Gb/chip capacity}},
year={2006},
month=oct. ,
volume={42},
number={10},
pages={2739 -2741},
}

@ARTICLE{STTRAM:EDL11,
author={Amiri, P.K. and Zeng, Z.M. and Upadhyaya, P. and Rowlands, G. and Zhao, H. and Krivorotov, I.N. and Wang, J.-P. and Jiang, H.W. and Katine, J.A. and Langer, J. and Galatsis, K. and Wang, K.L.},
journal={IEEE Electron Device Letters},
title={{Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM}},
year={2011},
month=jan. ,
volume={32},
number={1},
pages={57 -59},
}

@INPROCEEDINGS{STTRAM:Qualcomm09,
author={Lin, C.J. and Kang, S.H. and Wang, Y.J. and Lee, K. and Zhu, X. and Chen, W.C. and Li, X. and Hsu, W.N. and Kao, Y.C. and Liu, M.T. and YiChing Lin and Nowak, M. and Yu, N. and Luan Tran},
booktitle={Proceedings of International Electron Devices Meeting},
title={{45nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell}},
year={2009},
}

@ARTICLE{STTRAM:Review11,
author={Kawahara, T.},
journal={IEEE Design \& Test of Computers},
title={{Scalable Spin-Transfer Torque RAM Technology for Normally-Off Computing}},
year={2011},
month=jan.-feb. ,
volume={28},
number={1},
pages={52 -63},
}

@INPROCEEDINGS{STTRAM:Grandis11,
author={Driskill-Smith, Alexander},
booktitle={2nd Annual NVM Workshop},
title={{Latest Advances in STT-RAM}},
year={2011},
}

@Article{STTRAM:PRB05,
title = {{Currents, torques, and polarization factors in magnetic tunnel junctions}},
author = {Slonczewski, J. C.},
journal = {Physical Review B},
volume = {71},
number = {2},
pages = {024411},
numpages = {10},
year = {2005},
month = {Jan},
}

@Article{STTRAM:PRL08,
title = {{Perpendicular Spin Torques in Magnetic Tunnel Junctions}},
author = {Li, Z.  and Zhang, S.  and Diao, Z.  and Ding, Y.  and Tang, X.  and Apalkov, D. M. and Yang, Z.  and Kawabata, K.  and Huai, Y. },
journal = {Physical Review Letter},
volume = {100},
number = {24},
pages = {246602},
numpages = {4},
year = {2008},
month = {Jun},
}

@ARTICLE{STTRAM:Review10A,
author={Chen, E. and Apalkov, D. and Diao, Z. and Driskill-Smith, A. and Druist, D. and Lottis, D. and Nikitin, V. and Tang, X. and Watts, S. and Wang, S. and Wolf, S.A. and Ghosh, A.W. and Lu, J.W. and Poon, S.J. and Stan, M. and Butler, W.H. and Gupta, S. and Mewes, C. and Mewes, T. and Visscher, P.B.},
journal={IEEE Transactions on Magnetics},
title={{Advances and future prospects of spin-transfer torque random access memory}},
year={2010},
month=june ,
volume={46},
number={6},
pages={1873 -1878},
}

@ARTICLE{STTRAM:Review10B,
author={Wolf, S.A. and Jiwei Lu and Stan, M.R. and Chen, E. and Treger, D.M.},
journal={Proceedings of the IEEE},
title={{The promise of nanomagnetics and spintronics for future logic and universal memory}},
year={2010},
month=dec. ,
volume={98},
number={12},
pages={2155 -2168},
}

@ARTICLE{STTRAM:Gatech10,
author={Chatterjee, S. and Rasquinha, M. and Yalamanchili, S. and Mukhopadhyay, S.},
journal={IEEE TVLSI},
title={{A scalable design methodology for energy minimization of STTRAM: a circuit and architecture perspective}},
year={2010},
volume={PP},
number={99},
pages={1 -9},
}

@ARTICLE{STTRAM:Purdue10,
author={Jing Li and Ndai, P. and Goel, A. and Salahuddin, S. and Roy, K.},
journal={IEEE Transactions on Very Large Scale Integration},
title={{Design paradigm for robust spin-torque transfer magnetic RAM (STT MRAM) from circuit/architecture perspective}},
year={2010},
month=dec. ,
volume={18},
number={12},
pages={1710 -1723},
}

@ARTICLE{STTRAM:RPI10,
author={Xu, Wei and Sun,Hongbin and Wang,Xiaobin and Chen,Yiran and Zhang,Tong},
journal={IEEE TVLSI},
title={{Design of last-level on-chip cache using spin-torque transfer RAM (STT RAM)}},
year={2011},
volume={19},
number={3},
}
